PUBLICATIONS:

[239]  “Synthesis and characterization of monocrystalline GaPSi3 and (Si)5-2y(GaP)y with diamond like structures via epitaxy driven reactions of molecular hydrides” Patrick E. Sims, Chi Xu, Christian D. Poweleit, Jose Menendez, John Kouvetakis, Chemistry of Materials, 29(7), 3202-3210 (2017).

[238]  “Observation of Fermi-level singularities in the optical dielectric function of highly doped n-type Ge” C. Xu, N.S. Fernando, S. Zollner, J. Kouvetakis, and J. Menéndez, Physical Review Letters, in press, (2017).

[237]  “Molecular epitaxy of pseudomorphic Ge1-ySny (y=0.06-0.17) materials and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4” P.M. Wallace, Chi Xu, C.L. Senaratne, P. Sims, J. Kouvetakis, and J. Menéndez, Semiconductors Science and Technology, 32, 025093 1-10 (2017).

[236]  “Temperature dependence of the interband critical points of bulk Ge and stained Ge on Si ” N. Fernando, T. Nunley; A. Ghosh, C. M. Nelson, J. Cooke; A. Medina, Chi Xu, Jose Menendez, John Kouvetakis, and Stefan Zollner, Applied Surface Science, in print online, (2016). Link

[235]  “Toward GeSn lasers: light amplification and stimulated emission in GeSn waveguides at room temperature” J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, Electrochemical Transactions, 75(8), 163-176 (2016).

[234]  “Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies” T. R. Harris, Mee-Yi Ryu, Yung Kee Yeo, B. Wang, C.L. Senaratne and J. Kouvetakis, Journal of Applied Physics, 120, 085706 1-8 (2016).

[233]  “Ultra-low Resistivity Ge:Sb hetero-structures on Si using hydride epitaxy of deuterated stibine and trigermane” Chi Xu, C.L. Senaratne, P. Sims, J. Kouvetakis, and J. Menéndez, ACS Applied Materials & Interfaces, 8(36), 23810-23819 (2016).

[232]  “Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes” C.L. Senaratne, P.M. Wallace, J. D. Gallagher, J. D., P. E. Sims, J. Kouvetakis and J. Menendez, Journal of Applied Physics, 120, 025701 (2016).

[231]  “Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy” Hyun-Jun Jo, Geun Hyeong Kim, Jong Su Kim, Mee-Yi Ryu, Yung Kee Yeo, and J. Kouvetakis, Current Applied Physics, 16, 83-87 (2016).

[230]  “Ge-rich Ge1-xSix alloys: compositional dependence of the lowest direct and indirect gaps” Chi Xu, J.D. Gallagher, C.L. Senaratne, J. Menéndez, and J. Kouvetakis, Physical Review B, 93, 125206(1-9) (2016).

[229]  “Experimental doping dependence of the lattice parameter in n-type Ge: identifying the correct theoretical framework by comparison with Si” Chi Xu, C.L. Senaratne, J. Kouvetakis, and J. Menéndez, Physical Review B Rapid Communications , 93, 041201 (R)1-5 (2016).

[228]  “CMOS Compatible in-situ n-type doping of Ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)” Chi Xu , J. D. Gallagher, C. L. Senaratne, P. E. Sims, J. Kouvetakis and J. Menéndez, ECS Transactions, 69 (14) , 69 (14) (2015).

[227]  “Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) via reactions of Al(BH4)3 and M(TH3)3 (M = P, As)” Patrick Sims, Toshihiro Aoki, Jose Menendez, John Kouvetakis, ECS Transactions, 69(14), 83-93 (2015).

[226]  “Doping of direct gap Ge1-ySny alloys to attain electroluminescence and enhanced photoluminescence” C. Senaratne, J. Gallagher, Chi Xu, P. Sims, J. Menendez, J. Kouvetakis, ECS Transactions, 69(14), 157-164 (2015.

[225]  “Enhanced performance designs of group-IV light emitting diodes for mid IR photonic applications” J. D. Gallagher, C. L. Senaratne, C. Xu, P. M. Wallace, J. Menéndez, and J. Kouvetakis, ECS Transactions, 69 (14) , 69(14) (2015).

[224]  “Influence of device microstructure on the optical properties of Ge1-ySny (y=0-0.11) LEDs produced by next generation deposition methods” J. D. Gallagher, T. Aoki, J. Menendez and J. Kouvetakis, Microscopy and Microanalysis, 21(S3), 2137-2138 (2015).

[223]  “Atomic scale structure and bonding configurations in monocrystalline Al1-xBxPSi3 alloys grown lattice matched on Si(001) platforms” P. Sims, T. Aoki, J. Menendez and J. Kouvetakis, Microscopy and Microanalysis, 21(S3), 1923-1924 (2015).

[222]  “Electroluminescence from Ge1-ySny diodes with degenerate pn junctions” J. D. Gallagher, C. L. Senaratne, P. M. Wallace, J. Menéndez, and J. Kouvetakis, Applied Physics Letters, 107, 123507 (2015).

[221]  “Temperature-dependence of tensile-strain for Ge0.985Sn0.015/n-Si using photoreflectance spectroscopy” Hyun-Jun Jo, Geun Hyeong Kim, Jong Su Kim, Mee-Yi Ryu, Yung Kee Yeo, and J. Kouvetakis, Current Applied Physics, 16, 83-87 (2016).

[220]  “In situ, low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypes”, Chi Xu, J.D. Gallagher, P. Wallace, J. Menéndez, J. Kouvetakis, Semiconductor Science and Technology, 30, 105028 1-9 (2015).

[219]  “Ge1-x-ySixSny light emitting diodes on silicon for mid IR photonic applications” J. D. Gallagher , C. Xu , C. L. Senaratne , T. Aoki, P. M. Wallace, J. Kouvetakis, and J. Menéndez, Journal of Applied Physics, 118, 135701 (2015).

[218]  “Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys ” Chi Xu, Charutha L. Senaratne, John Kouvetakis, Jose Menendez, Solid-State Electronics, 110, 76-82 (2015).

[217]  “Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As) ” Patrick Sims, Toshihiro Aoki, Ruben Favaro, Patrick Wallace, Andrew White, Chi Xu, Jose Menendez, J. Kouvetakis, Chemistry of Materials , 27 (8), 3030–3039 (2015).

[216]  “Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition ” J. D. Gallagher, C. L. Senaratne, P. Sims, T. Aoki, J. Menendez, J. Kouvetakis, Applied Physics Letters, 106(9), 091103/1-091103/4 (2015).

[215]  “Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior ” Chi Xu, J. D. Gallagher, P. Sims, D. J. Smith, J. Menendez, J. Kouvetakis, Semiconductor Science and Technology , 30(4), 1-11 (2015).

[214]  “Non-radiative recombination in Ge1-ySny light emitting diodes: the role of strain relaxation in tuned heterostructure designs ” J. D. Gallagher, C. L. Senaratne, C. Xu, P. Sims, T. Aoki, D. J. Smith, J. Menendez, J. Kouvetakis, Journal of Applied Physics, 117(24), 245704/1-245704/10 (2015).

[213]  “Photoreflectance study of the direct transition in Ge0.99Sn0.01 /Si film grown on Si” Hyun-Jun Jo, Mo Geun So, Mee-Yi Ryu, Yung Kee Yeo, John Kouvetakis, in press, Thin Solid Films , 591(B), 295-300 (2015).

[212]  “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries ” C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, J. Menendez, Chemistry of Materials , 26(20), 6033-6041 (2014).

[211]  “Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys ” J. D. Gallagher, C. L. Senaratne, J. Kouvetakis, J. Menendez, Applied Physics Letters, 105(14), 142102/1-142102/5 (2014).

[210]  “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials ” L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, J. Menendez, Semiconductor Science and Technology, 29(11), 115028/1-115028/14 (2014) .

[209]  “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications ” Liying Jiang, Chi Xu, James D. Gallagher, Ruben Favaro, Toshi Aoki, Jose Menendez, John Kouvetakis, Chemistry of Materials, 26(8), 2522-2531 (2014).

[208]  “Direct gap group IV semiconductors for next generation Si-based IR photonics ” John Kouvetakis, James Gallagher, Jose Menendez, MRS Online Proceedings Library, 666/1-666/12 , 12 (2014).

[207]  “Frustrated incomplete donor ionization in ultra-low resistivity germanium films ” Chi Xu, C. L. Senaratne, J. Kouvetakis, J. Menendez, Applied Physics Letters, 105(23), 232103/1-232103/5 (2014).

[206]  “Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties ” C. L. Senaratne, J. D. Gallagher, Liying Jiang, Toshihiro Aoki, D. J. Smith, J. Menendez, J. Kouvetakis, Journal of Applied Physics , 116(13), 133509/1-133509/10 (2014).

[205]  “Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry ” J. Kouvetakis, R. Favaro, G. J. Grzybowski, C. Senaratne, J. Menendez, A. V. G. Chizmeshya, Chemistry of Materials , 26(15), 4447-4458 (2014).

[204]  “Nanostructure-Property Control in AlPSi3/Si(100) Semiconductors Using Direct Molecular Assembly: Theory Meets Experiment at the Atomic Level ” Liying Jiang, Toshihiro Aoki, David J. Smith, Andrew V. G. Chizmeshya, Jose Menendez, John Kouvetakis, Chemistry of Materials , 26(14), 4092-4101 (2014).

[203]  “Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03?% Sn) ” Thomas R. Harris, Yung Kee Yeo, Mee-Yi Ryu, Richard T. Beeler, John Kouvetakis, Journal of Applied Physics , 116(10), 103502/1-103502/7 (2014) .

[202]  “Synthesis and optical properties of Sn-rich Ge1-x-ySixSny materials and devices ” Chi Xu, Richard T. Beeler, Liying Jiang, James D. Gallagher, Ruben Favaro, Jose Menendez, John Kouvetakis, Thin Solid Films , 557, 177-182 (2014).

[201]  “Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates”Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis, submitted, Current Applied Physics., 14, S123-128 (2014)

[200]  “Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices ” Richard T. Beeler, James Gallagher, Chi Xu, Liying Jiang, Charutha L. Senaratne, David J. Smith, Jose Menendez, A. V. G. Chizmeshya, John Kouvetakis, ECS Journal of Solid State Science and Technology 2(9), 172-177 (2013).

[199]  “Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys ” J.D. Gallagher, Chi Xu, Liying Jiang, John Kouvetakis and José Menéndez, Applied Physics Letters , 103(20), 202104/1-202104/5 (2013).

[198]  “Rational design of mono-crystalline Ge5-2y(InP)y/Ge/Si(100) semiconductors:  Synthesis and fundamental properties”P. E. Sims, A.V.G. Chizmeshya, L. Jiang, R.T. Beeler, C. D. Poweleit, J. Gallagher, D. J. Smith, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society 135(33), 12388-12399 (2013).

[197]  “Optical properties of Ge1-x-ySixSny alloys with y > x: direct band gaps beyond 1550 nm” Chi Xu, Liying Jiang, J. Kouvetakis and J. Menendez, Applied Physics Letters 103, 072111, 1-4 (2013).

[196]  “Bandpap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices” Richard T. Beeler, James Gallagher,  Chi Xu, Liying Jiang, Charutha Senaratne, David J. Smith, José Menéndez, A.V.G. Chizmeshya, and John Kouvetakis, ECS Journal of Solid State Science and Technology 2(9), Q172-Q177 (2013).

[195]  “Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication”G. Grzybowski, A.V.G. Chizmeshya, C. Senaratne, J. Menendez and J. Kouvetakis, Journal of Materials Chemistry C: Materials for Optical and Electronic Devices 1(34), 5223-5234.

[194]  “Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content ” Mee-Yi Ryu, Tom R. Harris, Y.K. Yeo, R.T. Beeler and J. Kouvetakis, Applied Physics Letters 102, 171908 (2013).

[193]  “New Strategies for Ge on Si materials and devices: Fabrication based on non conventional hydride chemistries: The tetragermane case” Chi Xu, R.T. Beeler, Liying Jiang, G. Grzybowski, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Semiconductor Science and Technology 28, 105001 (2013).

[192]  “Nanoscale assembly of Silicon like Al(As1-xNx)ySi5-2y alloys:  Fundamental theoretical and experimental studies of structural and optical properties” L. Jiang, P. E. Sims, R. T. Beeler, G. Gryzbowski, A.V.G. Chizmeshya, D.J. Smith, J. Kouvetakis, and J. Menéndez, Physical Review B 88, 045208, 1-10, (2013).

[191]  “Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn” Chi Xu, R.T. Beeler G. Grzybowski, A.V.G Chizmeshya J. Menendez and J. Kouvetakis Journal of the American Chemical Society 134(51), 20756-20767 (2012).

[190]  "Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4" R.T. Beeler, D.J. Smith, J. Menéndez and J. Kouvetakis, Applied Physics Letters 101(22), 221111(2012).

[189]  “Synthesis of monocrystalline silicon-like (III-V)-(IV)3 semiconductors” A.V.G. Chizmeshya, J. Kouvetakis, R. Beeler and J. Menendez, Electrochemical Transactions 50 (9), 623-634 (2012).

[188]  "GeSn alloys on Si using deuterated stananne and trigermane: Synthesis and properties" G. Grzybowski, R.T. Beeler, L. Jiang, D.J. Smith,  J. Kouvetakis, and J. Menéndez Electrochemical Transactions 50 (9) 865-875 (2012).

[187]  “High performance Group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys” R.T. Beeler, J. Menéndez, D.J. Smith, and J. Kouvetakis, Electrochemical Transactions. 50 (9), 591-599 (2012).

[186] “Next generation of Ge1-ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4:  Reaction kinetics and tunable emission”,  G. Grzybowski, L. Jiang, R.T. Beeler, D.J. Smith, J. Menéndez and J. Kouvetakis, Applied Physics Letters 101(7), 072105/1-072105/5 (2012).

[185]  Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrates” Mee-Yi Ryu, Y. K. Yeo, Mohamed Ahoujja, Tom Harris, Richard Beeler, and John Kouvetakis, Applied Physics Letters 101, 131110 (2012).

[184] “Monocrystalline Si3Al(As1-xNx) and Si3Al(P1-xNx) alloys with diamond-like structures: New chemical approaches to Si integration”.  J. Kouvetakis, A.V.G Chizmeshya, T Watkins, G. Grzybowski, L. Jiang, R. T Beleer, and J. Menéndez. Chemistry of Materials 24(16), 3219-3230 (2012)

[183]  “SiGeSn photodiodes with 1eV optical gaps integrated on Si(100) and Ge(100) platforms”:  R. Beeler, D. J. Smith, J.  Menendez and J. Kouvetakis IEEE Journal of Photovoltaics 3(4) 434-440 (2012).

[182] “Ultra low-temperature epitaxy of Ge-based semiconductor and optoelectronic structures on Si(100): Introducing higher order germanes (Ge3H8, Ge4H10)” G. Grzybowski, R. Beeler, A.V.G. Chizmeshya, T. Watkins, L. Jiang and J. Kouvetakis Chemistry of Materials 24(9), 1619-1628 (2012).

[181] “Synthesis and bonding and optical properties of monocrystalline Al(As1-xPx)Si3 alloys on Si(100)” G. Grzybowski, T. Watkins, L. Jiang, D.J. Smith, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis Chemistry of Materials 24(12), 2347-2355 (2012).

[180] "(Si)5-2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units" ” T. Watkins, L. Jiang, D. J. Smith, C. Xu, A.V.G Chizmeshya, D.J. Smith, J. Menéndez and J. Kouvetakis. Applied Physics Letters 100, 022101 (2012).

[179] “Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP” T. Watkins, A. V.G Chizmeshya, L. Jiang, D. J. Smith, R. Beeler, G. Grzybowski, C. Poweleit, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society 133(40), 16212-16218 (2011).

[178 “Direct vs. indirect optical recombination in Ge films grown directly on Si substrates” G. Grzybowski, R. Roucka, J. Mathews, R.T Beeler, J. Kouvetakis and J. Menéndez, Physical Review B (84), 205307, 1-6 (2011).

[177]“Designer hydride routes to “Si-Ge”/(Gd,Er)2O3/Si(111) semiconductor-on-insulator heterostructures”, Tylan Watkins, Liying Jiang, D.J. Smith, A.V.G. Chizmeshya, J. Menendez and J. Kouvetakis Semiconductor Science and Technology 26, 125005-13 (2011).

[176]“Synthesis and materials properties of Sn/P doped “quasi-Ge” on Si(100): photoluminescence and devices” R.T. Beeler, G. Grzbowski, R. Roucka, Liying Jiang, J. Mathews, D. J. Smith J. Menendez and J. Kouvetakis, Chemistry of Materials 23(20), 4480-4486 (2011).

[175] “Temperature dependence of the Raman spectrum in Ge1-ySny and Ge1-x-ySixSny alloys” S. Bagchi, C.D. Poweleit, R.T. Beeler, J. Kouvetakis, and J. Menéndez, Physical Review B, 84, 193201-04 (2011).  

[174] "Photoluminescence in heavily doped GeSn:P materials grown on Si(100)” G. Grzbowski, R. Roucka, R. Beeler, Liying. Jiang, J. Mathews, J. Kouvetakis, J. Menendez Applied Physics Letters 99, 17010 (2011).

[173] “Non-linear structure-composition relationships in the Ge1-ySny/Si(100) (y<0.15) system” R. Beeler, R. Roucka, A.V.G. Chizmeshya, J. Kouvetakis and J. Menéndez, Physical Review B   84, 035204 (2011).

[172] “CMOS-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)” R. Roucka, R Beeler, J. Mathews, J. Kouvetakis and J. Menéndez, Journal of Applied Physics 109, 103115 (2011).

[171] “Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes ” R. Roucka, J.  Mathews, R. Beeler, J. Tolle, J. Kouvetakis, J. Menendez, Applied Physics Letters  98(6),  061109 (2011).

[170] "A novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures”, C. Weng, J. Kouvetakis and A.V.G. Chizmeshya, Journal of Computational Chemistry 32(5), 835-853 (2011).

[169] “Development of high performance near IR photodiodes:  A novel chemistry based approach to Ge-Sn devices integrated on silicon”  Radek Roucka, Jay Mathews, Chang’e Weng, Richard Beeler, John Tolle, José Menéndez, and John Kouvetakis, IEEE Journal of Quantum Electronics 47(2),  213-222 (2011).

[168]  "Direct gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon ", J. Mathews, R. T. Beeler, J. Tolle, C. Xu, R. Roucka, J. Kouvetakis, and J. Menéndez, Applied Physics Letters 97, 221912 (2010).

[167]  "Comparative Study of InGaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications ", R. T. Beeler, C. Weng, J. Tolle, R. Roucka, J. Mathews, J. Menéndez, and J. Kouvetakis, Solar Energy Materials and Solar Cells 94, 2362-2370 (2010) .

[166]  "Tuning optical and structural properties of Group IV semiconductors and prototype photonic devices", J. Kouvetakis, J. Mathews, R. Roucka, A. V. G. Chizmeshya, J. Tolle, and J. Menéndez, IEEE Photonics Journal 2 (6), 924-941 (2010).

[165]  Invited: “Si-Ge-Sn technologies: from molecules to materials to prototype devices”, J. Kouvetakis, J. Tolle, J. Mathews, R. Roucka, and J. Menéndéz, ECS Transactions 33 (6), 615 (2010).   Link.

[164]  Invited: "Practical strategies for tuning optical, structural and thermal Properties in Group IV ternary semiconductors", A. V. G. Chizmeshya and J. Kouvetakis, ECS Transactions 33 (6), 717 (2010).   Link.

[163]  "Synthesis and optical properties of amorphous Si3N4-xPx dielectrics and complementary insights from ab initio structural simulations", C. Weng, J. Kouvetakis, and A.V.G. Chizmeshya, V.R. D’Costa, J.B. Tice, AVG Chizmeshya, J. Menendez and J. Kouvetakis, Chemistry of Materials 22 (18), 5296-5305 (2010) .

[162]  "Si−Ge-based Oxynitrides: From Molecules to Solids", C. Weng, J. Kouvetakis and A. V. G. Chizmeshya, Chemistry of Materials 22(13), 3884-3899 (2010).    Link.

[161]  "Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy", R. Beeler, C. Weng, J. Tolle, R. Roucka, J. Mathews, D. A. Ahmari, J. Menéndéz, and J. Kouvetakis, ECS Transactions 33 (6), 941 (2010).   Link.

[160]  "Near-IR photodiodes with tunable absorption edge based on Ge1-ySny alloys integrated on silicon",  J. Mathews, R. Roucka, C. Weng, R. Beeler, J. Tolle, J. Menéndéz, and J. Kouvetakis, ECS Transactions 33 (6), 765 (2010).   Link.

[159]  "Thermal expansivity of Ge1-xSnx alloys", R. Roucka, J. Kouvetakis, A.V.G. Chizmeshya and J. Menéndez, Physical Review B 81(24), 245214 (2010).   Link.

[158]  "Synthesis, stability range and fundamental properties of Si-Ge-Sn semiconductors grown directly on large area Si(100) and Ge(100) platforms",  J. Xie, A.V.G. Chizmeshya, J. Tolle, V. R. D'Costa, J. Menéndez, and J. Kouvetakis, Chemistry of Materials 22(12),  3779-3789 (2010).   Link.

[157] "Germanium p-i-n photodiode on silicon for integrated photonic applications" , J. Mathews, R. Roucka, C. Weng, J. Tolle, J. Menéndez, and J. Kouvetakis, SPIE 7606 (Silicon Photonics V), 76061L (2010).    Link.

[156]  "Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors", V.R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis and J. Menéndez, Thin Solid Films 518 (9), 2531-2537 (2010).   Link.

[155]  “Practical routes to (SiH3)3P: Applications in group IV semiconductor activation and in group III–V molecular synthesis”, Jesse B. Tice, A. V. G. Chizmeshya, J. Tolle, V. R. D' Costa, J. Menéndez and J. Kouvetakis, Dalton Transactions 39, 4551- 4558 (2010).   Link.

[154]  "Direct absorption edge in GeSiSn alloys", V.R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis and J. Menéndez, American Institute of Physics: Physics of Semiconductors 1199, 39-40 (2009).  Link.

[153]  "Transport properties of doped GeSn alloys", V.R. D'Costa, J. Tolle, Junqi Xie, J. Menéndez and J. Kouvetakis, American Institute of Physics: Physics of Semiconductors 1199, 57-58 (2009).  Link.

[152]  “Direct integration of active Ge1-x(Si4Sn)x semiconductors on Si(100)”, Junqi Xie, J. Tolle, V.R. D’Costa, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Applied Physics Letters 95, 181909 (2009).   Link.

[151]   Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications”, J. Mathews, R. Roucka, J. Xie, S.-Q. Yu, J. Menéndez, and J. Kouvetakis, Applied Physics Letters 95, (13), 133506 (2009).   Link.

[150]   “Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L- telecommunication bands”, V.R. D’Costa, Y.-Y. Fang, J. Mathews, R. Roucka, J. Tolle, J. Kouvetakis, and J. Menéndez, Semiconductor Science and Technology 24, 115006 (2009).   Link.

[149]   “Advanced Si-based semiconductors for energy and photonic applications”, J. Kouvetakis, J. Menéndez, and J. Tolle, Solid State Phenomena 156-158, 77-84 (2010).   Link.

[148]   Invited article:  “Ternary GeSiSn alloys: New opportunities for strain and bandgap engineering using group-IV semiconductors”, V.R. D’Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis and J. Menéndez, Thin Solid Films 518(9), 2531-2537 (2010) .    Link.

[147]   “Practical B and P doping via SixSnyGe1-x-y-zMz quaternaries lattice matched to Ge: structural, electrical and strain behavior”, Y-Y Fang, J. Tolle, V.R. D’Costa, A. V. G. Chizmeshya, J. Menéndez and J. Kouvetakis, Applied Physics Letters 95, 081113 (2009).   Link.

[146]   “Infrared dielectric function of p-type Ge0.98Sn0.02 alloys", V.R. D’Costa, J. Tolle, J. Xie, J. Kouvetakis and J. Menéndez, Physical Review B 80, 125209 (2009).   Link.

[145]   “Synthesis and Fundamental Properties of Stable Ph3SnSiH3 and Ph3SnGeH3 Hydrides: Model Compounds for the Design of Si−Ge−Sn Photonic Alloys”, J.B. Tice, A.V.G. Chizmeshya, T. L. Groy and J. Kouvetakis, Inorganic Chemistry 48(13), 6314-6320 (2009).    Link.

[144]   “Precursors for Group IV epitaxy for microelectronic and optoelectronic applications”, S. G. Thomas, M. Bauer, M. Stephens, C. Ritter and J. Kouvetakis, Solid State Technology 52(4), 12-15 (2009).    Link.

[143]   “Ether-like Si-Ge hydrides for applications in synthesis of  nanostructured semiconductors and Si-Ge-O-N dielectrics”, J. Tice, C. Weng, J. Tolle, V.R. D’Costa, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Journal of the Chemical Society, Dalton Transactions 34, 6773-6782 (2009).    Link.

[142]   “Integration of Zn-Cd-Te-Se semiconductors on Si platforms via structurally designed cubic templates based on group IV elements”, J. Tolle, V.R. D’Costa, B. Forrest, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Chemistry of Materials 21(14), 3143-3152 (2009).    Link.

[141]   “Tunable optical gap at a fixed lattice constant in Group-IV semiconductor alloys”, V. R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis and J. Menéndez, Physical Review Letters 102(10), 107403/1-4 (2009).   Link.

[140]   Invited article: “Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties”, J. Tolle, V. D’Costa, Junqi Xie, A.V.G. Chizmeshya, J. Menéndez, and J. Kouvetakis, Solid State Electronics 53(8), 816-823 (2009).    Link.

[139]   “Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix /Si(100) materials using nanoscale building blocks”, Y-Y Fang, J. Tolle, V. R. D’ Costa, J. Menéndez and J. Kouvetakis, Solid State Communications 149(1-2), 78-81 (2009).    Link.

[138]   “Independently tunable electronic and structural parameters in ternary Group IV semiconductors for optoelectronic applications”, J. Kouvetakis, V.R. D’Costa, Y.-Y. Fang, J. Tolle, A.V.G. Chizmeshya, J. Xie and J. Menéndez, The Japan Society for Promotion of Science 5th International Symposium, “Advanced science and technology of silicon materials”, 352-356 (2008).   Link.

[137]   “Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics”, Y.-Y. Fang, J. Tolle, V.R. D’Costa, R. Roucka, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society 130(47), 16095-16102 (2008).   Link.

[136]   Invited article: “Nanosynthesis of Si-Ge-Sn semiconductors and devices via designer hydride compounds”, J. Kouvetakis, J. Tolle, V.R. D’Costa, Y.-Y. Fang, A.V.G. Chizmeshya and J. Menéndez, Electrochemical Society Transactions 16(10), 807-821 (2008).    Link.

[135]   “SnGe photoconductor structures at 1.55 um: From advanced materials to prototype devices”, R. Roucka, J. Mathews, V. D’Costa, Junqi Xie, J. Tolle, Shui-Qing Yu, J. Menéndez and J. Kouvetakis, Journal of Vacuum Science and Technology 26(6), 1952-1959 (2008).    Link.

[134]   “Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si (111) substrates”, R. Roucka, Y.-J. An, A.V.G. Chizmeshya, V.R. D’Costa, J. Tolle, J. Menéndez and J. Kouvetakis, Solid State Electronics 52(11), 1687-1690 (2008).    Link.

[133]   “Synthesis and Properties of N3 and CN delivery compounds and related precursors for nitride and ceramic fabrication”, Jesse Tice, C. J. Ritter, A.V.G Chizmeshya, Brandon Forrest, Levi Torrison, T. L. Groy and J. Kouvetakis, Applied Organometallic Chemistry 22, 451-459 (2008).   Link.

[132]   “Synthesis of (Hf,Zr)B2-based heterostructures: hybrid substrate systems for low temperature Al-Ga-N integration with Si”, J. Kouvetakis, Y.-J. An, V. D’Costa, J. Tolle, A.V.G Chizmeshya, J. Menéndez and R. Roucka, Journal of Materials Chemistry 18(40), 4775-4782 (2008).    Link.

[131]   “Synthesis and fundamental studies of chlorinated Si-Ge hydride macromolecules for strain engineering and selective-area epitaxial applications”, Jesse B. Tice, Y-Y Fang, John Tolle, Andrew Chizmeshya and John Kouvetakis, Chemistry of Materials 20(13), 4374-4385 (2008).    Link.

[130]   “Structural electronic and energetic properties of SiC(111)/ZrB2(0001) heterojunctions:  A first-principles density functional theory study”, Po-Liang Liu, A. V. G. Chizmeshya and John Kouvetakis, Physical Review B: Condensed Matter and Materials Physics 77(3), 035326 (2008).   Link.

[129]   “Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)”, Y.-Y. Fang, V.R. D’Costa, J. Tolle, C.D. Poweleit, J. Kouvetakis and J. Menéndez, Thin Solid Films 516, 8327-8332 (2008).   Link.

[128]   “Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications”, R. Roucka, V. D’Costa, Y.-J. An, M. Canonico, A.V.G Chizmeshya, J. Menéndez and J. Kouvetakis, Chemistry of Materials 20(4), 1431-1442 (2008).    Link.

[127]   “Redetermination of tetrakis(trimethylstannyl)germane”, M.R. Bauer, T. Groy and J. Kouvetakis, Acta Crystallographica E 64(1), 49 (2008).    Link.

[126]   “Synthesis of molecular adducts of beryllium, boron, and gallium cyanides: Theoretical and experimental correlations with the solid state and molecular analogs”, Cole Ritter, A.V.G. Chizmeshya, Tom Groy, and  J. Kouvetakis, Chemistry of Materials 19(24), 5890-5901 (2007).    Link.

[125]   “Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry", Y-Y Fang, J. Tolle, Vijay D’Costa, Jose Menendez, A.V.G Chizmeshya  and J. Kouvetakis, Chemistry of Materials 19(24), 5910-5925 (2007).    Link.

[124]   Invited article: “Advances in SiGeSn technology (II)”, R.A. Soref, J. Kouvetakis and Jose Menendez, John Tolle, and Vijay D’Costa, Journal of Materials Research 22(12), 3281-3291 (2007).     Link.

[123]   “Optical characterization of Si1-xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers”, C. D. Poweleit, C.-W. Hu, J. Tolle, J. Kouvetakis, and I.S.T. Tsong, Journal of Applied Physics 101, 114312 (2007).    Link.

[122]   “Raman scattering in Ge1−ySny alloys”, V. R. D’Costa, J. Tolle, R. Roucka, J. Kouvetakis and J. Menendez, Solid State Communications 144, 240-244 (2007).     Link.

[121]   “Compositional dependence of Raman frequencies in ternary Ge1-x-ySixSny alloys”, Vijay D’Costa, J. Tolle, C. Poweleit, Jose Menendez and J. Kouvetakis, Physical Review B 76, 035211 (2007).   Link.

[120]   Invited article: “Synthesis and structures of M(Me3SiNCHNSiMe3)3 (M=Al,Ga) via reactions of M-hydrides with Me3SiNCNSiMe3”, C. J. Ritter, A.V.G. Chizmeshya and  J. Kouvetakis,  Applied Organometallic Chemistry 21, 595-600 (2007).    Link.

[119]   Invited article:“Advances in SiGeSn/Ge technology”, R. A. Soref, J. Kouvetakis, and J. Menendez, Materials Research Society, (Group IV Semiconductor Nanostructures) 958, 13-24 (2007).     Link.

[118]   “ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: Synthesis and fundamental studies”, Jesse Tice, J. Tolle, A.V.G. Chizmeshya and J. Kouvetakis, Journal of the American Chemical Society 129, 7950-7960 (2007).    Link.

[117]   Invited highlight article:  “New classes of Si-based photonic materials and device architectures via designer molecular routes”, J. Kouvetakis and A.V.G. Chizmeshya, Journal of Materials Chemistry 17, 1649-1655 (2007).    Link.

[116]   “Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)”, Y-Y Fang, J. Tolle, Vijay D’Costa, Jose Menendez, A.V.G. Chizmeshya, and J. Kouvetakis, Applied Physics Letters 90, 061915 (2007).    Link.

[115]   “Chemical routes to Ge/Si(100) structures for low temperature Si-based semiconductor applications”, M. Wistey, Y-Y Fang, J. Tolle, A.V.G Chizmeshya, and J. Kouvetakis, Applied Physics Letters 90, 082108 (2007).   Link.

[114]   “Ge1-ySny/Si(100) composite substrates for growth of InxGa1-x As and GaAsxSb1-x alloys”, Radek Roucka, John Tolle, Vijay D’Costa, Jose Menendez, and John Kouvetakis, Journal of Applied Physics 101, 013518 (2007).    Link.

[113]   “Low temperature chemical vapor deposition of Si-based compounds via [SiH3SiH2SiH3]: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures”, John Tolle, Vijay D’Costa, A.V.G. Chizmeshya, Jose Menendez, C-W. Hu, I.S.T Tsong and John Kouvetakis, Applied Physics Letters 89, 231924 (2006).   Link.

[112]   “Epitaxial semimetallic HfxZr1−xB2 templates for optoelectronic integration on silicon”, Radek Roucka, YuJing An, John Tolle, Vijay D’Costa, Peter Crozier, Jose Menendez, and John Kouvetakis, Applied Physics Letters 89, 242110 (2006).   Link.

[111]   “Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular beam epitaxy”, Zhi-Tao Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, J. Tolle and J. Kouvetakis, Journal of Applied Physics 100, 033506 1-4 (2006).    Link.

[110]   “Fundamental studies of P(GeH3)3,  As(GeH3)3, and Sb(GeH3)3:  Practical n-dopants for new group IV semiconductors”, Cole  Ritter, John Tolle, Vijay D’Costa, Jose Menendez, Andrew Chizmeshya and John Kouvetakis, Chemistry of Materials 18, 6266-6277  (2006).    Link.

[109]   “Transferability of optical bowing parameters between binary and ternary Group-IV alloys”, Vijay R. D’Costa, Candi S. Cook, José Menéndez, John Tolle, John Kouvetakis and Stefan Zollner, Solid Sate Communications 138(6), 309-313 (2006).   Link.

[108]   “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon”, John Tolle, Radek Roucka, Vijay D’Costa, Jose Menendez, Andrew Chizmeshya and John Kouvetakis, Applied Physics Letters 88, 252112 (2006).    Link.

[107]   “Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy”, John Tolle, Radek Roucka, Vijay D’Costa, Jose Menendez, Andrew Chizmeshya and John Kouvetakis, Materials Research Society Symp. Proc. (Progress in Semiconductor Materials—Novel Materials and Electronic and Optoelectronic Applications) 891, 579-584 (2006).   Link.

[106]   “Synthesis of butane-Like Si-Ge hydrides:  enabling precursors for CVD of Ge-Rich semiconductors”, Cole J. Ritter, Changwu Hu, A.V.G. Chizmeshya, John Tolle, Ronald Nieman, Ignatius S.T. Tsong and John Kouvetakis, Journal of the American Chemical Society 128(21), 6919-6930 (2006 ).    Link.

[105]   Invited Review: Sn-based group-IV semiconductors: A new platform for opto- and microelectronics on Si”, J. Kouvetakis and Jose Menendez, Annual Reviews of Materials Research, 36, 497-554 (2006).    Link.

[104]   “Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny∕Ge1−xSix study”, Vijay D’Costa, Candi Cook, A.G. Birdwell, Chris A. Littler, S. Zollner, J. Kouvetakis and Jose Menendez, Physical Review B 73, 125207(1-16) (2006).   Link.

[103]   “Compositional dependence of critical point energies in Ge1-xSnx alloys”, C. Cook, V. D'Costa, J. Kouvetakis, S Zollner, J. Menendez, Physics of Semiconductors, Part A, 65-66 ( 2005).    Link.

[102]   “First-Principles Studies of GaN(0001) Heteroepitaxy on ZrB2(0001)”, P.-L. Liu, A.V. G. Chizmeshya, J. Kouvetakis, and I. S. T. Tsong, Physical Review B 72, 245335 (1-7) (2005).    Link.

[101]   “Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers”, Z.T. Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P.-L. Liu, A. V. G. Chizmeshya, J. Kouvetakis, and I.S.T. Tsong, Physical Review Letters 95, 266105 (1-4) (2005).   Link.

[100]   “Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB2 templates”, Rahul Trivedi, Po-Liang Liu, Radek Roucka, John Tolle, A.V.G. Chizmeshya, I.S.T. Tsong and J. Kouvetakis, Chemistry of Materials 17(18),  4647-4652 (2005).    Link.

[99]   “Low-temperature pathways to Ge-rich Si1-xGex alloys via single-source hydride chemistry”, C.-W. Hu, I.S.T. Tsong, A.V.G. Chizmeshya, C. Ritter, J. Tolle, and J. Kouvetakis, Applied Physics Letters 87, 181903 (2005).   Link.

[98]   “Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4–nSiHn hydrides”, Changwu Hu, J. Tolle, P.A. Crozier, I.S.T. Tsong, J. Menendez and J. Kouvetakis, Applied Physics Letters 87, 080131 (2005).   Link.

[97]   “Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: Precursors to semiconductor hetero- and nanostructures on Si”, Cole J. Ritter, Changwu Hu, A.V.G. Chizmeshya, John Tolle, Douglas Klewer, Ignatius S.T. Tsong and John Kouvetakis, Journal of the American Chemical Society 127(27), 9855-9864 (2005).   Link.

[96]   “Versatile buffer layer architectures based on Ge1-xSnx alloys”, R. Roucka, J. Tolle, C. Cook, V.J. Costa, A.V.G Chizmeshya, J. Menendez,  S. Zollner, and J. Kouvetakis Applied Physics Letters  86, 191912 (2005).   Link.

[95]   “Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation”, R.A. Trivedi, J. Tolle, A.V.G. Chizmeshya, Radek Roucka, I.S.T. Tsong and  J. Kouvetakis, Applied Physics Letters  87,  072107 (2005).   Link.

[94]   “Thin film science and technology”, Terry Alford, J. Kouvetakis and J.W. Mayer, Encyclopedia of Chemical Processing, Dekker Encyclopedias, Taylor and Francis Group, pp 3061-3073 (2005).   Link.

[93]   “Epitaxial film growth of zirconium diboride on Si(001)”, R. Roucka, J. Tolle, A.V.G. Chizmeshya, I.S.T. Tsong and J. Kouvetakis, Journal of Crystal Growth 277/1-4, 364-371, (2005).    Link.

[92]   “Epitaxial growth of ZrB2(0001) on Si(111) for III nitride applications:  A review”, J. Tolle, J. Kouvetakis, D.-W. Kim, S. Mahajan, A. Chizmeshya, C.W Hu, A. Bell, F.A. Ponce and I.S.T. Tsong, Chinese Journal of Physics 43 (1), 233-248 (2005).    Link.

[91]   “Epitaxial growth of AlxGa1–xN on Si(111) via a ZrB2(0001) buffer layer”, J. Tolle, D. Kim, S. Mahajan, A. Bell, F.A. Ponce, M. Kottke, J. Kouvetakis and I.S.T. Tsong,  Applied Physics Letters 84, 3510 (2004).   Link.

[90]   “Type-I Ge/Ge1-x-y SixSny strained-layer heterostructures with a direct Ge bandgap”, J. Menendez and J. Kouvetakis, Applied Physics Letters 85, 1175 (2004).   Link.

[89]   “Nucleation and growth of epitaxial ZrB2(0001) on Si(111)”, C-H. Hu, A.V.G. Chizmeshya, J. Tolle, J. Kouvetakis and I.S.T. Tsong, Journal of Crystal Growth 267/3-4, 554-563 (2004).    Link.

[88]   “Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3”, P. A. Crozier, Cole Ritter, J. Tolle, and J. Kouvetakis Applied Physics Letters 84, 3441-3443 (2004). Also featured: May 10, 2004 issue of Virtual Journal of Nanoscale Science & Technology.   Link.

[87]   “Optical and structural properties of SixSnyGe1–xy alloys”, Pavan Aella, C. Cook, J. Tolle, S. Zollner, A.V.G. Chizmeshya and J. Kouvetakis, Applied Physics Letters 84, 888 (2004).    Link.

[86]   “Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys”, Shiu Fai Li, Matthew R. Bauer, José Menéndez, and John Kouvetakis, Applied Physics Letters 84, 867 (2004).    Link.

[85]   Optical constants and interband transitions of Ge1-xSnx alloys (x<0.2) grown on Si by UHV-CVD”, Candi S. Cook, Stefan Zollner, Matthew R. Bauer, Pavan Aella, John Kouvetakis, and Jose Menendez, Thin Solid Films 455-456, 217-221 (2004).    Link.

[84]   “SnGe superstructure materials for Si-based infrared optoelectronics”, Matthew Bauer, Peter Crozier, A.V.G Chizmeshya and J. D. Smith and J. Kouvetakis Applied Physics Letters 83, 3489 (2003).   Link.

[83]   “Synthesis of ternary Si-Ge-Sn semiconductors on Si(100) via SnxGe1-x buffer layers”, Matthew Bauer, Cole Ritter, Peter Crozier, J. Menendez, Jie Ren and J. Kouvetakis, Applied Physics Letters 83, 2163 (2003).   Link.

[82]   “Tunable band structure in diamond cubic tin-germanium alloys grown on silicon substrates”, Matthew Bauer, J. Kouvetakis, D.J. Smith and Jose Menendez, Solid State Communications,  127, 355-359 (2003).    Link.

[81]   “Synthesis of highly coherent SiGe and Si4Ge nanostructures by single-source molecular beam epitaxy of H3SiGeH3 and Ge(SiH3)4”, C.W. Hu, J.L. Taraci, J. Tolle, M.R. Bauer, P.A. Crozier, I.S.T. Tsong and J. Kouvetakis, Chemistry of Materials  15(19), 3569-3572 (2003).   Link.

[80]   “Experimental and Theoretical Study of Deviations from Vegard's Law in the SnxGe1-x System”, A.V.G Chizmeshya, M. Bauer and J. Kouvetakis, Chemistry of Materials 15, 2511-2519 (2003).    Link.

[79]   “New Ge-Sn materials with adjustable bandgaps and lattice constants”, M. R. Bauer, J. Tolle, A. V. G. Chizmeshya, S. Zollner,  J. Menendez, and J. Kouvetakis, Material Research Society Symp. Proc. (Progress in Semiconductors, Electronic and Optoelectronic Applications) 744, 49-54 (2003).   Link.

[78]   “Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy”, Levi Torrison, John Tolle, I.S.T Tsong and J. Kouvetakis, Thin Solid Films  434/1-2, 106-111 (2003).   Link.

[77]   “Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer”, J. Tolle, R. Roucka, I.S.T. Tsong and J. Kouvetakis, Applied Physics Letters 82, 2398 (2003).    Link.

[76]   “Stoichiometric and non-stoichiometric films in the Si-O-N system: mechanical, electrical and dielectric properties”, Levi Torrison, J. Tolle, S. K. Dey, D. Gu, P.A. Crozier, I.S.T Tsong and J. Kouvetakis, Materials Science and Engineering B: Solid State Materials for Advance Technology 97(1), 54-58 (2003).    Link.

[75]   “Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN”, R. Roucka, J. Tolle, A. V. Chizmeshya, P. A. Crozier, C. D. Poweleit, D. J. Smith, J. Kouvetakis and I.S.T. Tsong, Applied Surface Science 212-213, 872-878 (2003).    Link.

[74]   “Novel synthetic pathways to wide bandgap semiconductors in the Si-C-Al-N system”, J. Tolle, R. Roucka, A.V.G. Chizmeshya, P. A. Crozier, D. J. Smith, I. S. T. Tsong and J. Kouvetakis, invited paper for a special issue in honor of Neil Bartlett, Solid State Sciences  4/11-12, 1509-1519 (2002).    Link.

[73]   “Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source CVD”, Levi Torrison, J. Tolle, David J. Smith, Jose Menendez, C.D. Poweleit and J. Kouvetakis, Journal of Applied Physics 92, 7475-7480 (2002).   Link.

[72]   “Synthesis and structure of trans-Tetrabromobis(dimethylamine)”, Cole Ritter, T.L. Groy and J. Kouvetakis, Acta Crystallographica E 58, 684 (2002).   Link.

[71]   “Ge-Sn semiconductors for band-gap and lattice engineering”, M. Bauer, J. Taraci, J. Tolle A.V.G Chizmeshya, S. Zollner, J. Menendez, D. J. Smith and J. Kouvetakis, Applied Physics Letters  81, 2992 (2002).   Link.

[70]   “Crystal structure of tin tetrabromodioxane, SnBr4(C4H8O2), a one dimensional polymer of Sn (IV)”, M. Bauer, T. Groy and J. Kouvetakis, Zeitschrift Kristallographie, NCS 21, 421-422 (2002).   Link.

[69]   "Optical vibrational and structural properties of Ge1-xSnx alloys grown by UHV-CVD", Jennifer Taraci, S. Zollner, M. R. Mc Cartney, Jose Menendez, D. J. Smith, John Tolle, M. Bauer, Erika Duda, N. V. Edwards, and J. Kouvetakis, Materials Research Society Symp. Proc. 602, 1141-1146 (2002).   Link.

[68]   "Growth of SiCAlN on Si (111) via a crystalline oxide interface",  J. Tolle, Radek Roucka, I.S.T. Tsong, P. Crozier, A.V.G. Chizmeshya and J. Kouvetakis, Applied Physics Letters  81, 2181 (2002).   Link.

[67]   "Synthesis and analysis of compounds and alloys in the Ge-C, Si-C, and Si-Ge-C systems", J. Kouvetakis and J. W. Mayer (invited book chapter) Silicon-Germanium-Carbon Alloys, Growth Properties and Applications, Optoelectronic Properties of Semiconductors and Superlattices, M.O Manaresh series editor, Pantelides and Zollner editors, Taylor and Francis Books Inc., Volume 15, 20-58 (2002).

[66]   "Low-temperature epitaxial growth of the quaternary wide band gap semiconductors SiCAlN", Radek Roucka, J. Tolle, Tsong, P. Crozier, A. Chizmeshya, D. J. Smith, I.S.T. Tsong and J. Kouvetakis, Physical Review Letters 88, 206102 (2002).   Link.

[65]   "Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates", Radek Roucka, J. Tolle, I.S.T. Tsong, D.J. Smith and J. Kouvetakis, Applied Physics Letters 79, 2880 (2001).   Link.

[64]   "Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods", Jennifer Taraci, M.R. Mc Cartney, Jose Menendez, S Zollner, D. J. Smith, Arne Haaland, and J. Kouvetakis, Journal of the American Chemical Society 123 (44), 10980-10987 (2001).    Link.

[63]   "Controlled striped phase formation on ultra-flat Si(001) surfaces during diborane exposure", J. F Nielsen, J. P. Pelz, C. W. Hu, H. Hibino, I.S.T. Tsong, and J. Kouvetakis, Applied Physics Letters 79, 3857 (2001).   Link.

[62]   "Structure of dichlorodeuteroalane (bis)-trimethylamine", L. Torrison, J. Kouvetakis and T.L. Groy, NCS 216, 476-468 (2001).

[61]   "Simple chemical routes to diamond-cubic germanium-tin alloys", Jennifer Taraci, John Tolle, M. R. McCartney, Jose Menendez, M. Santana, D. J. Smith and J. Kouvetakis, Applied Physics Letters 78, 3607 (2001).   Link.

[60]   "Synthesis and Structural Properties of the Binary Framework C–N Compounds of Be, Mg, Al, and Tl", Darrick Williams, B. Pleune, C. Leinenweber and J. Kouvetakis, Journal  of Solid State Chemistry 159, 244-250 (2001).    Link.

[59]   "Elastic properties of nanocrystalline zirconium–silicon–boron thin films", M Chirita, R. Sooryakumar, H. Xia, John Tolle, D Smith, J. Kouvetakis and I.S.T. Tsong, Journal of Applied Physics  89(8), 4349-4353 (2001).   Link.

[58]   "Structural properties of heteroepitaxial germanium carbon alloys grown on (100) Si", D.J. Smith, M. Todd, Jeff McMurran and J. Kouvetakis, Philosophical Magazine A 81, 1613-1624 (2001).   Link.

[57]   “Synthesis of new azidoalanes with heterocyclic molecular structures”, J. Kouvetakis, Cory Steffek, Levi Torrison, Jeff McMurran and J. Hubbard, Main Group Metal Chemistry 24(2), 77-84 (2001).

[56]   “Synthesis and Structures of Heterocyclic Azidogallanes [(CH3)ClGaN3]4 and [(CH3)BrGaN3]3 en Route to [(CH3)HGaN3]x:  An Inorganic Precursor to GaN”, J. Kouvetakis, Cory Steffek, Jeff McMurran and J. Hubbard, Inorganic Chemistry 39(12), 3805-3809 (2000).   Link.

[55]   “Surface preparation of SiC and Al2O3 substrates for MBE and MOCVD deposition of AlN, GaN, and InAlGaN", Victor Torres and J. Kouvetakis, invited review, Handbook of Thin Film Process Technology (Institute of Physics, IOP) IOP- G94 (2000).   

[54]   "The centrosymetric dimer of dichloro (trimethylsiloxyl) aluminum", J. Kouvetakis, and T.L. Groy, Acta Crystallographica C56, 564 (2000).   Link.

[53]   “Synthesis of LiBC4N4, BC3N3 and related C-N compounds of boron: New precursors to light element ceramics”, Darrick Williams, B. Pleune, M. Williams, R. A. Andersen and J. Kouvetakis, Journal of the American Chemical Society 122(32), 7735-7741 (2000).     Link.

[52]   “Synthesis of Cl2InN3, Br2InN3, and Related Adducts”, Cory Steffek, Jeff McMurran, Brett Pleune, T. Concolino, A. Rheingold and J. Kouvetakis, Inorganic Chemistry 39, 1615-1617 (2000).   Link.

[51]   "2,4,6-Tris[2-(trimethylsilyl)ethynyl]-1,3,5-triazene: a novel precursor to C-N two-dimensional structures", J. Kouvetakis, and T.L. Groy, Acta Crystallographica  56, 533 (2000).   Link.

[50]   "Molecular structure of CH(GeBr3)3 determined by gas electron diffraction and ab initio calculations:  Steric congestion in tri-and tetra-germylmethanes", Arne Haaland, Dmitry J. Shorokhov, Hans Vidar Volden, J. Kouvetakis, and J. McMurran, Journal of Molecular Structure 509, 29-34 (1999).    Link.

[49]   “Synthesis of Si2Ge(Cx) and related phases”,  D. Nesting, J. Kouvetakis and J. McMurran, Materials Research Society Symp. Proc. (Solid state chemistry of inorganic materials) 547, 475-480 (1999).   Link.

[48]   “Real time monitoring of structure and stress evolution of boron films grown on Si (100) by UHV CVD”,  D.C. Nesting, J. Kouvetakis, Sean Hern, Eric Chason, and I.S.T. Tsong, Journal of Vacuum Science & Technology A  17(3), 891-894 (1999).    Link.

[47]   “Development of low-temperature GaN chemical vapor deposition based on a single molecular source, H2GaN3”, Jeff McMurran, D. J. Smith and J. Kouvetakis, Applied Physics Letters 74, 884 (1999).    Link.

[46]   "Morphological control and structural characteristics of  crystalline Ge-C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures", D. Nesting, D. J. Smith and J. Kouvetakis, Applied Physics Letters 74, 958 (1999).   Link.

[45]   “New materials for Si-based heterostructure engineering. Synthesis of silicon-germanium-carbon alloys and compounds by UHV-CVD and molecular chemistry”, J. Kouvetakis, D. C. Nesting, and D. J. Smith, American Chemical Society Books, Chapter 9 (Inorganic materials directions for advanced materials), Winter and Hoffman editors 727, 113-129 (1999).

[44]   “H2GaN3 and Derivatives:  A Facile Method to Gallium Nitride”, J. McMurran, Dinguo Dai, Cory Steffek, B. Balasubramanian, J. Hubbard and J. Kouvetakis,  Inorganic Chemistry 7, 6638-6648 (1998).    Link.

[43]   “The application of chemical methods for the preparation of group IV heterostructures and superlattices”, David Nesting, J. Kouvetakis, Julie Lorentzen, and Jose Menendez, Materials Research Society Symp. Proc. (Epitaxy and Applications of Si-Based Heterostructures) 533, 281-287 (1998).

[42]   “Synthesis of Nanoporous Cubic In(CN)3 and In1-xGax(CN)3 and Corresponding Inclusion Compounds”,  D. J. Williams, J. Kouvetakis and M. O’Keeffe, Inorganic Chemistry 37, 4617-4620 (1998).    Link.

[41]   “Synthesis and atomic and electronic structure of new Si-Ge-C alloys and compounds”, J. Kouvetakis, D. C. Nestng, and D.J. Smith, (invited review in “Frontiers in Solid State Inorganic Chemistry” Chemistry of  Materials  10, 2935-2949 (1998).     Link.

[40]   “Formation of a tetrameric, cyclooctane-like, azidochlorogallane [HClGaN3]4, and related azidogallanes.  Exothermic single-source precursors to GaN nanostructures”,  J. Kouvetakis, J. McMurran, J. L. Hubbard, D. C. Nesting and D. J. Smith, Journal of the American Chemical Society 120, 5233-5237 (1998).    Link.

[39]   "Novel Methods for CVD of Ge4C and (Ge4C)xSiy Diamond-like Semiconductor Heterostructures:  Synthetic Pathways and Structures of Trigermyl-(GeH3)3CH and Tetragermyl-(GeH3)4C Methanes”,  J. Kouvetakis, Arne Haaland, Dmitry J. Shokorov, Hans Vidar Volder, Georgi V. Sirichev, and Phillip T. Matsunaga, Journal of the American Chemical Society 120 (27) , 6738-6744 (1998).    Link.

[38]   “Ordered structures in unstrained, epitaxial Ge-Si-C films”, J. Kouvetakis, D. Nesting, M. O’Keeffe and D. J. Smith, Chemistry of Materials 10(5), 1396-1401 (1998).    Link.

[37]   “Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems”, D. Chandrasekhar, J. McMurran, J. Kouvetakis, and D. J. Smith, Applied Physics Letters  72, 2117 (1998).   Link.

[36]   “Synthesis and analysis of SiGeC”, J. Kouvetakis and J. W. Mayer (5th International Conference on Solid State and Integrated Circuit Technology (Proceedings of IEEE) 1-5 (1998).   Link.

[35]    “The use of novel molecular precursors for the high pressure synthesis of metastable materials”, D.C. Nesting, J. Kouvetakis, and J. V. Badding, (National Institute for Research in Inorganic Materials: Advanced Materials), 1-4 (1998).  

[34]   “Growth and characterization of thin Si80C20 films based upon Si4C building blocks”, J. Kouvetakis, D. Chandrasekhar and D. J. Smith, Applied Physics Letters 72, 930 (1998).   Link.

[33]   “Synthesis of molecular precursors to carbon-nitrogen-phosphorus polymeric systems”, J. Kouvetakis, J. McMurran, D. Nesting and J. L. Hubbard, Chemistry of  Materials 10, 590-593 (1998).    Link.

[32]   “The disordered crystal structure of Zn(CN)2 and Ga(CN)3”, D. J. Williams, D. E. Partin, J. Kouvetakis and M. O’Keeffe, Journal of  Solid State Chemistry  134, 164-169 (1997).    Link.

[31]   “Molecular Structure of C(GeBr3)4 Determined by Gas-Phase Electron Diffraction and Density Functional Theory Calculations:  Implications for the Length and Stability of Ge−C Bonds in Crystalline Semiconductor Solids”,  A. Haaland, D. Shorokhov, T. G. Strand, M. O’ Keeffe and J. Kouvetakis, Inorganic Chemistry 36, 5198-5201 (1997).    Link.

[30]   “New silicon-carbon materials incorporating Si4C building blocks”, D. Chandrasekhar, J. Kouvetakis, J. McMurran, M. Todd  and D. J. Smith, Materials Research Society Symp. Proc., (Thin film structure and morphology) 441, 723-728 (1997).   Link.

[29]   “Synthetic Routes to Ga(CN)3 and MGa(CN)4 (M = Li, Cu) Framework Structures”, L. Brousseau, D. Williams, J. Kouvetakis and M. O’Keeffe, Journal of the American Chemical Society 119 (27), 6292-6296 (1997).    Link.

[28]   “Synthesis and Structure of a Novel Lewis Acid−Base Adduct, (H3C)3SiN3·GaCl3, en Route to Cl2GaN3 and Its Derivatives:  Inorganic Precursors to Heteroepitaxial GaN”, J. Kouvetakis, J. McMurran, M. O’Keeffe and J. L. Hubbard, Inorganic Chemistry 36, 1792-1797 (1997).   Link.

[27]   “New pathways to heteroepitaxial GaN by inorganic CVD.  Synthesis and characterization of related Ga-C-N novel systems”, J. Kouvetakis, M. O’Keeffe, L. Brousseau, J. McMurran, D. Williams and D. J. Smith, Materials Research Society Symp. Proc. 449, 313-318 (1997).   Link.

[26]   “HREM characterization of heteroepitaxial structures”, D. Smith, A. Amali, D. Chandrasekhar, J. Kouvetakis and M. Todd, Proc. First Int. Symp. Adv. Phys. Fields (Application to Material Science on the Nanometer Scales) 62-69 (1996).

[25]   “Synthesis and characterization of heteroepitaxial diamond-structured Ge1-xCx (x=1.5-5%) alloys using chemical vapor deposition”, M. Todd, J. Kouvetakis and D. J. Smith, Applied Physics Letters 68, 2407 (1996).    Link.

[24]   “Growth of GaN on (100) Si using a new C-H and N-H free single-source precursor”, J. Kouvetakis, J. McMurran, D. B. Beach and D. J. Smith, Materials Research Society Symp. Proc., (Gallium nitride and related materials) 395, 79-84 (1996).   Link.

[23]   “In situ real time observations of chemical vapor deposition using an environmental TEM”, J. Drucker, R. Sharma, K. Weiss, B. L. Ramakrishna and J. Kouvetakis, Materials Research Society 404, 75-84 (1996).

[22]   “Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN”, J. McMurran, M. Todd, J. Kouvetakis and D. J. Smith, Applied Physics Letters 69, 203 (1996).   Link.

[21]   “Chemical synthesis of metastable germanium carbon alloys grown heteroepitaxially on (100) Si”, M. Todd, J. McMurran, J. Kouvetakis and D. J. Smith, Chemistry of Materials 8, 2491-2498 (1996).    Link.

[20]   “Synthesis and characterization of tetrakis(trihalogermyl)methanes.  Molecules containing sterically strained carbon centers”, P. Matsunaga, J. Kouvetakis and T. Groy, Inorganic Chemistry 34, 5103-5104 (1995).    Link.

[19]   “Novel synthetic routes to carbon nitride", M. Todd, J. Kouvetakis, T. Groy, D. Chandrasekhar, D. J. Smith and P. Deal, Chemistry of Materials 7, 1422-1426 (1995).    Link.

[18]   “Growth of heteroepitaxial Si1-x-yGexCy alloys on silicon using novel deposition chemistry”, M. Todd, P. Matsunaga, J. Kouvetakis, D. Chandrasekhar and D. J. Smith, Applied Physics Letters 67, 1247 (1995).   Link.

[17]   “Electron beam assisted chemical vapor deposition of gold”, J. Kouvetakis, R. Sharma, B. L. Ramakrishna, J. Drucker and P. Seidler, Materials Research Society Symp. Proc., (Film synthesis and growth using energetic beams) 388, 322-328 (1995).   Link.

[16]   “Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys”, M. Todd, J. Kouvetakis, P. Matsunaga, D. Chandrasekhar and D. Smith, Materials Research Society Symp. Proc. (Silicon Technology) 377,  529-534 (1995).    Link.

[15]   “In situ, real time, observation of Al chemical vapor deposition on SiO2 in an environmental transmission electron microscope”, J. Drucker, R. Sharma, J. Kouvetakis and K. Weiss, Journal of Applied Physics, 77,  2846-2848 (1995).   Link.

[14]   “Novel chemical routes to silicon-germanium-carbon materials”, J. Kouvetakis, M. Todd, D. Chandrasekhar and D. Smith, Applied Physics Letters, 65, 2960 (1994).   Link.

[13]  “Novel synthetic routes to carbon-nitrogen thin films”, J. Kouvetakis, A. Bandari, M. Todd and B. Wilkens, Chemistry of Materials, 6 (6), 811-814 (1994).    Link.

[12]   “Chemical vapor deposition of a highly conductive boron-doped graphite from triphenyl boron”, J. Kouvetakis, M. W. McElfresh and D. B. Beach, Carbon, 32 (6), 1129-1132 (1994).    Link.

[11]   “Synthesis of ethynyl-substituted precursors to carbon-nitrogen-sulfur extended structures: reactions of C3N3F3 and C2N2SCl2 with alkali-metal (trimethylsilyl)acetylides”, J. Kouvetakis, D. Grotjahn, P. Becker and S. Moore, Chemistry of Materials, 6 (5), 636-639 (1994).    Link.

10] “Calculation of thermodynamic properties of metastable phases of the elements”, J. Kouvetakis and L. Brewer, Journal of Phase Equilibria, 14 (5), 563-571 (1993).    Link.

[9] “Temperature stability range of the binary MoC Phase”, J. Kouvetakis and L. Brewer, Journal of Phase Equilibria, 13 (6), 601-604 (1992).   Link.

[8] “Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine”, J. Kouvetakis, V. V. Patel, C. W. Miller and D. B. Beach, Journal of Vacuum Science & Technology 8 (6), 3929-3933 (1990).   Link.

[7] “Novel aspects of graphite intercalation by fluorine and fluorides and new B-C, C-N and B-C-N materials based on the graphite network”, J. Kouvetakis, T. Sasaki, C. Shen, R. Hagiwara, M. Lerner, K. M. Krishnan and N. Bartlett, Synthetic Metals 34, 1-7 (1989).    Link.

[6] “Chemical vapor deposition of gallium nitride from diethylgallium azide”, J. Kouvetakis and D. B. Beach, Chemistry of Materials 1 (4), 476-478 (1989).   Link.

[5] “Thermodynamic properties of generalized Lewis acid-base intermetallics”, J. Kouvetakis and L. Brewer, Lawrence Berkeley Laboratory publication, Ph.D. Thesis, Lawrence Berkeley Laboratory Report-25340, (1988).   Link.

[4] “Characterization of newly synthesized novel graphite films”, K. M. Krishnan, J. Kouvetakis, T. Sasaki, and N. Bartlett, Materials Research Society Symp. Proc. (Better Ceramics through Chemistry, 3) 121, 527-30 (1988).    Link.

[3] “Boron-carbon-nitrogen materials of graphite-like structure”, R. B. Kaner, J. Kouvetakis, J. Warble, C. E. Sattler and N. Bartlett, Materials Research Bulletin  22(3), 399-400 (1987).    Link.

[2] “Structure of chloro(n5-pentamethylcyclopentadienyl)bis(trimethylphosphine)iridum(III) hexafluorophosphate”, R. Kaner, J. Kouvetakis and S. Mayorga, Acta Crystallographica C41, 500 (1986).   Link.

[1] “A novel graphite-like material of composition BC3 and nitrogen-carbon graphites”, J. Kouvetakis, R. B. Kaner, M. L. Sattler and N. Bartlett, Journal of Chemical Society Chemical Communications 24, 1758-1759 (1986).   Link.

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