RECENT RESEARCH GRANTS/CONTRACTS (since 2001):

2013
51) $788,057, NSF (National Science Foundation), "Molecular routes to new classes of polar/non-polar alloy semiconductors" Focused Research Group --Menendez, Kouvetakis, Chizmeshya, Smith (2013-2016).

50) $300 K, DOE, National Renewable Energy Lab, "Development of (Si)5-2y(III-V)y alloys for photovoltaic applications"

2012
49) $150 K, Air Force Research Laboratory Optoelectronic Technology Branch, Wright Paterson AFB.  “New chemistry routes to group IV materials and devices”

2011
48) $450 K, Air Force Office Scientific Research, “New generations of SiGeSn materials and devices”

2010
47) $55 K, Emcore Corporation, Albuquerque, NM, "Development of Group IV photovoltaic cells".

2009
46)  $900 K, National Science Foundation, “Sn-containing group-IV semiconductors for energy applications in photovoltaics and thermoelectricity”, Focused Research Group - J. Menendez, J. Kouvetakis and A. V. G. Chizmeshya (2009-2011).

45)  $60 K, Office of the Vice President of Research, ASU (project manager salary support) (2009-2010).

44)  $145 K, contract with SUN Microsystems, “Si photonics/Group IV devices” (2008-2009).

2008
43)  $135 K, subcontract Georgia-Tech/Stanford, DARPA “Fabrication of modulator and photodetector architectures based on Group IV alloys” (2008-2009).

42)  $498,909 NSF STTR Phase II, "Germyl silanes - enabling precursors for chemical vapor deposition of advanced CMOS substrates, CMOS-integrated MEMS, and nano-scale quantum-dot silicon photonics", ASU PI: J. Kouvetakis jointly with industrial partner Voltaix Corporation.

41)  $990,000 federal ($1,300,000 federal plus institutional and industrial matching), US Department of Energy (DOE) under the program Future  Generation of Photovoltaic Devices and Processes, “Advance semiconductor materials for breakthrough photovoltaic applications”, PIs: Kouvetakis, Menendez.

2007
40)  $70,000, cash gift from Voltaix Corporation to Kouvetakis lab, "Development of selective area epitaxial deposition of high Ge content SiGe embedded as source/drain stressor for enhancing PMOS applications”.

39)  $260,000 DURIP, “Hybrid molecular deposition system for ultra-low temperature CVD materials synthesis and semiconductor materials performance optimization”, Air Force Office for Scientific Research, PI: Kouvetakis.

38)  $270,000, Science Foundation Arizona, “Hybrid substrates for low cost solid-state lighting and solar energy applications”, PI: Kouvetakis.

37)  $25,000 “Si based near-IR detector”.

36)  $13,000 AFOSR, “Acquisition of a wet bench for wafer processing”.

2006
35)  $150,000 STTR Phase I (small business technology transfer), “Advanced Si-Ge-Sn-based photonic materials and devices for detector and photovoltaic applications”, National Science Foundation with the Silicon Photonics Group.

34)  $780,000 SBIR PHASE II (small business innovation research award), US Army Night Vision Labs Fort Belvoir Virginia, “Large-area hybrid substrates for HgCdTe infrared detectors” (2006-2008), The Silicon Photonics Group, a spin off company from the Kouvetakis lab.

33)  $2,600,000, Air Force Office for Scientific Research: MURI (Multidisciplinary University Research Initiative) "Infrared and Terahertz lasers on Si using novel group-IV alloys” (2006-2010), J. Kouvetakis, J. Menendez, et al. (my share of this is at 60%).

32)  $600,000, National Science Foundation (2006-2008):  PFI, Partnerships for Innovation, Ig Tsong and J. Kouvetakis (my share was 50% ).

2005
31)  $100,000, US Army Small Business Innovation Research (SBIR) program “Large-area hybrid substrates for HgCdTe infrared detectors”, Si-Photonics Group, a spin off company from the Kouvetakis lab.

30)  $100,000 STTR (small business technology transfer), “Germyl silanes: enabling precursors for chemical vapor deposition of advanced devices”, National Science Foundation/Voltaix Corporation, ASU PI: Kouvetakis.

29)  $100,000 STTR (small business technology transfer), “Silicon based quantum well laser”, AFOSR/QuanTerra Corporation, ASU PI: Kouvetakis.
           
28)  $100,000, Voltaix Corporation, “Kouvetakis labs graduate student fellowships” $50K donation and $50K licensing fees for several patents dealing with Si-Ge technologies, PI: Kouvetakis.
           
27)  $245,000, NSF-(IMR), "Acquisition of a high resolution x-ray facility for materials research and education" (2005-2006), National Science Foundation, PI: Kouvetakis.

2004
26)  $100,000, "Synthesis characterization, properties and performance evaluation of novel direct band gap semiconductors", US Army Research Office (ARO) (2004-2005), PI: Kouvetakis.

25)  $280,000, "Group IV quantum well optical devices on silicon", Intel corporation Si-photonics lab (2005-2008 ), PI: Kouvetakis.

2003
24)  $75,000,  "Direct gap GeSn, Ge, and SiGeSn epilayers and nanostructures grown on Si" (2003-2006), AFOSR (Air Force Office of Scientific Research) Hanscom Air Force Base, PI: Kouvetakis.

23)  $100,000, "NER: Synthesis of nanoscale structures of new direct bandgap semiconductors", National Science Foundation (2003-2004), PI: Kouvetakis, Co-PI: Tsong.

22)  $60,000, ACT (approaches to combat terrorism) supplement National Science Foundation (2003-2004), PI: Kouvetakis.

21)  $230,000, NSF-(IMR), "Acquisition of an infrared ellipsometer for research and student training" (2003-2004), National Science Foundation, $150,000 ($50,000 matching from ASU), PI: Kouvetakis and 4 Co PIs.

2002
20)  $358,000, "Synthetic routes to main-group inorganic solids", National Science Foundation-DMR (2002-2005), PI: Kouvetakis.

19)  $200,000, "A high resolution ultrahigh vacuum scanning electron microscope fitted to a molecular beam epitaxy chamber (UHV-SEM-MBE)", US Army Research Office (ARO) DURIP Program (2002-2004), PI: Kouvetakis, Co-PI: Tsong.

18)  $80,000, "Development of the new wide bandgap semiconductor SiCAlN into device material", ASU (2002-2003), Co-PI (PI: Ig Tsong).

2001
17)  $434,000, "Synthesis and characterization of superhard films and coatings based on light elements", US Army Research Office (2000-2003), PI: Kouvetakis.

16)  $100,000, "Direct electron beam writing for fabrication of nano-scale architectures", NSF-DMR (2001-2003), Co-PI (PI: Drucker / Physics).

 

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