1.

Patents and Technology Transfer

Small Business Technology Transfer (STTR) and Small Business Innovation Research (SBIR) Awards Activity:

(a)

Phase 1:  AFOSR/QuanTerra to develop a Si-based laser (2005).

(b)

Phase 1:  US Army Night Vision Labs/Silicon Photonics to manufacture hybrid substrates for HgCdTe integration (2005-6).

(c)

Phase 1:  NSF/Voltaix to synthesize germyl silanes (2007-8) for photovoltaic applications

(d)

Phase 2:  US Army Night Vision Labs/Silicon Photonics to manufacture hybrid substrates for HgCdTe integration in collaboration with Raytheon (2007-9).

(e)

Phase 1:  NSF/Silicon Photonics to develop Si-Ge-Sn-based Photonic Materials and Devices for detector and photovoltaic applications (2006-7).

(f)

Phase 2:  NSF/Voltaix to synthesize germyl silanes for photovoltaic and group IV strain engineering applications (2008-10).

Patent Activity (ASU):
(a) Issued US Patents

[1]

US Patent No. 5,606,056:  “Carbon nitride and its synthesis”, J. Kouvetakis and M. Todd, (issued in 1997).  Link.

[2]

US Patent No. 6,207,844:  “Novel compositions of matter and methods of depositing pure thin films of gallium nitride semiconductors”, J. Kouvetakis and J. McMurran.    Link.

[3]

US Patent No. 6,897,471:  “Strained engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum well photodetectors, lasers, emitters, and modulators grown on SnySixGe1-y-z buffered silicon”, R.A. Soref, Jose Menendez and J. Kouvetakis.    Link.

[4]

US Patent No. 6,911,084:  "Low temperature epitaxial growth of quaternary wide bandgap semiconductors", J. Kouvetakis, I.S.T. Tsong, Radek Roucka and J. Tolle.    Link.

[5]

US Patent No. 7,238,596:  “Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs”, John Kouvetakis, Matthew Bauer, John Tolle and Candi Cook, (issued July 3, 2007). Licensed.    Link.

[6]

US Patent No. 7,374,738:  “Superhard dielectric compounds and methods of preparation”,  J. Kouvetakis, J. Tolle, I.S.T. Tsong, and L. Torrison, (issued May 20, 2008). Licensed.     Link.

[7]

US Patent No. 7,582,891:  “Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon”, J. Kouvetakis, J. Tolle, and J. Menendez (ASU) and Ling Liao (Intel Corp.), Dean Samara-Rubio (Intel Corp.), (issued September 1, 2009).   Link.

[8]

US Patent No. 7,589,003:  “GeSn alloys and ordered phases with direct tunable bandgaps grown on silicon”, J. Kouvetakis, M. R. Bauer, J. Tolle, J. Menendez, (issued September 15, 2009). Licensed.   Link.

[9]

US patent No. 7,598,513:  “SixSnyGe1-x-y and related heterostructures based on Si, Ge and Sn”, J. Kouvetakis, M. R. Bauer and J. Tolle.  Patent issued October 6, 2009.  International patent application (PCT) (filed 2004).    Link.

[10]

US Patent No. 7,781,356:  “Epitaxial growth of Group III nitrides on silicon substrates via reflective lattice-matched metal boride buffer layers”, J. Kouvetakis, I.S.T. Tsong, J. Tolle and R. Roucka. (issued August 24, 2010).

[11]

US Patent No. 7,910,468: Part 1 “Methods and compositions for preparing Ge/Si semiconductors substrates” J. Kouvetakis and Y-Y. Fang, issued on 03/23/2011. 

[12]

US Patent No. 7,915,104 B1: “Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates”, J. Kouvetakis and Yan-Yan Fang,  issued on 03/29/2011. 

[13]

US Patent No. 7,981,392 B2 (WO 2006031240): “Hydride compounds with silicon and germanium core atoms and methods of synthesizing the same” J. Kouvetakis, Cole Ritter, J. Tolle (issued 07/19/2011 and licensed to Voltaix Corp.)

[14]
  US Patent No. 8,029,905 B2: “GeSiSn-based compounds, templates and semiconductor structures”, J. Kouvetakis and R. Roucka. International , patent PCT WO 2006099171. US patent issued 09/04/2011. 

[15]

US Patent No. 8,043,980 B2: “Methods of making halo-silylgernanes” J. Kouvetakis, Jesse Tice and Yan-Yan Fang (Licensed to Voltaix Corp.) PCT patent application filed on 4/2008 WO 2009005862. US patent issued 10/25/2011. Licensed by Voltaix Corp.

[16]

US Patent No. 8,133,802 B2: “Novel silicon-germanium hydrides and methods of making and using same”.  WO 2007/062096: “Novel silicon-germanium hydrides which give Ge-Si films with low dislocation densities and surface roughness and methods for synthesis and use in deposition methods”, J. Kouvetakis and C. Ritter (US patent issued March 13, 2012 and licensed to Voltaix Corp.).

[17]

US Patent No. 8,216,537 B2: "Silicon-germanium hydrides and methods for making and using same", J. Kouvetakis, C. Ritter, C-W Hu, I.S.T. Tsong, and A.V.G. Chizmeshya, PCT/US06/045091 filed Nov 21, 2006.( US patent issued July 10, 2012 and licensed to Voltaix Corp.).

[18]
US Patent No. 8,518,360: "Silicon-germanium hydrides", J. Kouvetakis, C. Ritter, C-W Hu, I.S.T. Tsong, and A.V.G. Chizmeshya, (filed July 6, 2012, issued August 27, 2013 and licensed to Voltaix Corp.)
[19]
US Patent No. 8,524,582: "Silicon-germanium hydrides and methods for making and using same ", J. Kouvetakis and C. Ritter, (filed February 28, 2012, issued September 3, 2013 and licensed to Voltaix Corp.)
[20]

US Patent No. 8,545,627: "Zirconium and hafnium boride alloy templates on silicon for nitride integration applications ", J. Kouvetakis and R. Roucka, (provisional filed 1/2007 and 10/2007 ASU cases M7-041 and M7-887, issued October 1, 2013)

[21]

US No. Patent 8,568,681 B2: “Hydride with silicon and germanium core atoms and methods of synthesizing same” (continuation application) J. Kouvetakis, Cole Ritter, J. Tolle (Issued Oct 29, 2013, licensed to Voltaix Corp.).

[22]

US No. Patent 8,803,194: "Zirconium and hafnium boride alloy templates on silicon for nitride integration applications ", J. Kouvetakis and R. Roucka, issued Aug 12, 2014.

[23]

US No. Patent 8,821,635: “Method for growing Si-Ge semiconductor materials and devices on substrates” J. Kouvetakis, I.S.T Tsong, C.Hu and J. Tolle (licensed to Voltaix part of Air Liquide) issued Sept 2, 2014.

 
     
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